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IXXH100N60C3

IXXH100N60C3

IXXH100N60C3

IXYS

IGBT Transistors XPT IGBT C3-Class 600V/190Amp

SOT-23

IXXH100N60C3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 830W
Terminal Position SINGLE
Base Part Number IXX*N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 830W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 190A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 95 ns
Test Condition 360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 70A
Turn Off Time-Nom (toff) 220 ns
IGBT Type PT
Gate Charge 150nC
Current - Collector Pulsed (Icm) 380A
Td (on/off) @ 25°C 30ns/90ns
Switching Energy 2mJ (on), 950μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $15.286000 $15.286
10 $14.420755 $144.20755
100 $13.604486 $1360.4486
500 $12.834420 $6417.21
1000 $12.107944 $12107.944

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