STGFW30H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGFW30H65FB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3PFM, SC-93-3
Number of Pins
3
Weight
6.961991g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
58W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGFW30
Element Configuration
Single
Input Type
Standard
Power - Max
58W
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
60A
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.55V
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
149nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
37ns/146ns
Switching Energy
151μJ (on), 293μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.039041
$11.039041
10
$10.414190
$104.1419
100
$9.824707
$982.4707
500
$9.268592
$4634.296
1000
$8.743954
$8743.954
STGFW30H65FB Product Details
STGFW30H65FB Description
STGFW30H65FB transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGFW30H65FB MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.