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STGP35HF60W

  • STGP35HF60W
  • STGP35HF60W

STGP35HF60W

STGP35HF60W

STMicroelectronics

STGP35HF60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP35HF60W Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Base Part Number STGP35
Element Configuration Single
Power Dissipation 200W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Gate Charge 140nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/175ns
Switching Energy 290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.12000 $3.12
50 $2.68020 $134.01
100 $2.34940 $234.94
500 $2.02966 $1014.83
STGP35HF60W Product Details

STGP35HF60W                Description


This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz).

 


STGP35HF60W               Features

■ Improved Eoff at elevated temperature

■ Minimal tail current

■ Low conduction losses


STGP35HF60W               Applications

■ Welding

■ High frequency converters

■ Power factor correction



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