STGP5H60DF               Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGP5H60DF              Features

? High-speed switching

? Tight parameter distribution

? Safe paralleling

? Low thermal resistance

? Short-circuit rated

? Ultrafast soft recovery antiparallel diode

STGP5H60DF              Applications

? Motor control

? UPS

? PFC