STGW40V60DLF Description

An IGBT called the STGW40V60DLF was created employing a cutting-edge, proprietary trench gate field stop construction. The component is a part of the V series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high-frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and very narrow parameter distribution.

STGW40V60DLF Features

• Safe paralleling

• Tail-less switching off

• Low thermal resistance

• Tight parameters distribution

• VCE(sat)= 1.8 V (typ.) @ IC= 40 A

• Designed for soft commutation only

• Low VFsoft recovery co-packaged diode

• Maximum junction temperature: TJ= 175 °C

STGW40V60DLF Applications

• Industrial

• Personal electronics

• Communications equipment