STGWA50M65DF2 Description

The STGWA50M65DF2 IGBT was created employing a cutting-edge, exclusive trench gate field-stop structure. The STGWA50M65DF2 is an IGBT from the M series, which offers the best performance and efficiency for inverter systems where low-loss and short-circuit functionality are critical. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operations.

STGWA50M65DF2 Features

• Safer paralleling

• Low thermal resistance

• Tight parameters distribution

• VCE(sat) = 1.65 V (typ.) @ IC = 50 A

• Soft and very fast recovery antiparallel diode

• 6 μs of minimum short-circuit withstand time

STGWA50M65DF2 Applications

• Industrial

• Enterprise systems

• Communications equipment