STGP7NC60HD

new-10%

Manufacturer part number:STGP7NC60HD

Manufacturer:STMicroelectronics

Description:STGP7NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP7NC60HD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	80W
Current Rating	14A
Base Part Number	STGP7
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	80W
Input Type	Standard
Turn On Delay Time	18.5 ns
Transistor Application	POWER CONTROL
Rise Time	7ns
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	72 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	25A
Reverse Recovery Time	37ns
Continuous Drain Current (ID)	14A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	25.5 ns
Test Condition	390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 7A
Continuous Collector Current	14A
Turn Off Time-Nom (toff)	221 ns
Gate Charge	35nC
Current - Collector Pulsed (Icm)	50A
Td (on/off) @ 25°C	18.5ns/72ns
Switching Energy	95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free