STGW20H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW20H65FB Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
168W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW20
Element Configuration
Single
Input Type
Standard
Power - Max
168W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
40A
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.55V
Test Condition
400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 20A
IGBT Type
Trench Field Stop
Gate Charge
120nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
30ns/139ns
Switching Energy
77μJ (on), 170μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.10000
$4.1
30
$3.52267
$105.6801
120
$3.08775
$370.53
510
$2.66753
$1360.4403
1,020
$2.29079
$2.29079
2,520
$2.19420
$4.3884
STGW20H65FB Product Details
STGW20H65FB Description
STGW20H65FB, a part of the new HB series of IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high frequency converters. Safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution.