STGW25H120F2 Description
These IGBTs were created employing a cutting-edge, exclusive trench gate field-stop construction. These components are a part of the H series of IGBTs, which offer the best conduction and switching loss trade-offs for high switching frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.
STGW25H120F2 Features
? TJ = 175 °C is the maximum junction temperature.
? Series of high-speed switches
? Tail current was reduced.
? IC = 25 A, VCE(sat) = 2.1 V (typ.)
? A minimum short circuit withstand time of 5 s at 150 °C (TJ).
? Closely spaced parameter distribution
? Paralleling safely
? Low thermal conductivity
STGW25H120F2 Applications
? dependable power supply
? Welding equipment
? Solar-powered inverters
? Power factor adjustment
? The use of high frequency converters
