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STGWT30H65FB

STGWT30H65FB

STGWT30H65FB

STMicroelectronics

STGWT30H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWT30H65FB Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.756003g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 260W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWT30
Element Configuration Single
Input Type Standard
Power - Max 260W
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 30A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.75V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 149nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 37ns/146ns
Switching Energy 151μJ (on), 293μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.158495 $2.158495
10 $2.036316 $20.36316
100 $1.921053 $192.1053
500 $1.812314 $906.157
1000 $1.709730 $1709.73
STGWT30H65FB Product Details

STGWT30H65FB Description


The STGWT30H65FB is a Trench gate field-stop IGBT, HB series 650 V, 30 A high speed. These gadgets are IGBTs that were created employing a cutting-edge, exclusive trench gate fieldstop structure. These components are a part of the latest generation of IGBTs, the HB series, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of any frequency converter. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operations.



STGWT30H65FB Features


  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance

  • Maximum junction temperature: TJ = 175 °C

  • High speed switching series

  • Minimized tail current



STGWT30H65FB Applications


  • Welding

  • High-frequency converters

  • Photovoltaic inverters

  • Power factor correction


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