STGW50NC60W

new-10%

Manufacturer part number:STGW50NC60W

Manufacturer:STMicroelectronics

Description:STGW50NC60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW50NC60W Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	285W
Base Part Number	STGW50
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	285W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	100A
Collector Emitter Breakdown Voltage	600V
Turn On Time	69 ns
Test Condition	390V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 40A
Turn Off Time-Nom (toff)	343 ns
Gate Charge	195nC
Td (on/off) @ 25°C	52ns/240ns
Switching Energy	365μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant