STGW30NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGW30NC60WD Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
200W
Current Rating
60A
Base Part Number
STGW30
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
ISOLATED
Input Type
Standard
Turn On Delay Time
29.5 ns
Transistor Application
POWER CONTROL
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
118 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Reverse Recovery Time
40 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
42.5 ns
Test Condition
390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
Turn Off Time-Nom (toff)
189 ns
Gate Charge
102nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
29.5ns/118ns
Switching Energy
305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.74000
$4.74
30
$4.07400
$122.22
120
$3.57108
$428.5296
510
$3.08506
$1573.3806
1,020
$2.64935
$2.64935
2,520
$2.53764
$5.07528
STGW30NC60WD Product Details
STGW30NC60WD Description
The STMicroelectronics STGW30NC60WD IGBT utilizes the advanced Power MESH? process resulting in an excellent trade-off between switching performance and low on-state behaviour.
STGW30NC60WD Features
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Very soft ultra-fast recovery antiparallel diode
High-frequency operation
STGW30NC60WD Applications
HF, SMPS and PFC in both hard switch and resonant topologies