STGB6M65DF2 Description

This STGB6M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGB6M65DF2 is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation. 

STGB6M65DF2 Features

6 μs of short-circuit withstand time

VCE(sat) = 1.55 V (typ.) @ IC = 6 A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

STGB6M65DF2 Applications

Motor control

UPS

PFC