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IKW75N60H3FKSA1

  • IKW75N60H3FKSA1
  • IKW75N60H3FKSA1

IKW75N60H3FKSA1

IKW75N60H3FKSA1

Infineon Technologies

IKW75N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW75N60H3FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2005
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 428W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 428W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 190 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Test Condition 400V, 75A, 5.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge 470nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 31ns/265ns
Switching Energy 3mJ (on), 1.7mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.927381 $2.927381
10 $2.761680 $27.6168
100 $2.605358 $260.5358
500 $2.457885 $1228.9425
1000 $2.318760 $2318.76
IKW75N60H3FKSA1 Product Details

IKW75N60H3FKSA1 Description


When employing this Infineon Technologies IKW75N60H3FKSA1 IGBT transistor, don't be frightened to increase the amps in your equipment. The collector emitter voltage is up to 600 V. It can dissipate up to 428000 mW of power. It is created in just one design. The operating temperature range for this IGBT transistor is -40 °C to 175 °C.



IKW75N60H3FKSA1 Features


  • Package: TO247-3

  • Package/Case: TO-247-3

  • Device Package: PG-TO247-3

  • RoHS: Lead free / RoHS Compliant



IKW75N60H3FKSA1 Applications


  • Automotive

  • Personal electronics

  • Communications equipment 


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