STGW60H65F

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Manufacturer part number:STGW60H65F

Manufacturer:STMicroelectronics

Description:STGW60H65F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW60H65F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	360W
Base Part Number	STGW60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	65 ns
Power - Max	360W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	210 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	120A
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	96 ns
Test Condition	400V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 60A
Turn Off Time-Nom (toff)	265 ns
IGBT Type	Trench Field Stop
Gate Charge	217nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	65ns/180ns
Switching Energy	750μJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free