AIKB50N65DH5ATMA1  Features and Benefits

High-speed H5 technology offering.g

Best-in-Class efficiency in hard switching and resonant

topologies

Plug and play replacement of previous generation IGBTs

650V breakdown voltage

Low gate charge Q:

IGBT co-packed with RAPID 1 fast and soft antiparallel diode

Maximum junction temperature 175'C

Dynamically stress tested

Qualified according to AEC-Q101

Green package (RoHS compliant)

AIKB50N65DH5ATMA1  Applications

Off-board charger

On-board charger

DC/DCconverter

Power-Factor correction