FGY75T120SQDN Description

The Ultra Field Stop Trench structure of this Insulated Gate Bipolar Transistor (IGBT) ensures outstanding performance in demanding switching applications, with low on-state voltage and little switching loss. The IGBT is ideal for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is included in the device.

FGY75T120SQDN Features

? Field Stop Technology for Extremely Efficient Trenching

? TJ = 175°C Maximum Junction Temperature

VCE(sat) = 1.7 V (Typ.) @ IC = 75 A

? ILM was tested on 100% of the parts (1)

? Diode with a Soft Fast Reverse Recovery

? High-speed switching optimized

? Compliant with RoHS

FGY75T120SQDN Applications

? Solar Inverter, UPS