STGW80V60DF Description

STGW80V60DF, manufactured by STMicroelectronics, is a type of insulated gate bipolar transistor (IGBT) with an advanced proprietary trench gate field stop structure,  which is a part of the V series of IGBTs. It is able to deliver both low conduction and low switching losses, so as to improve the efficiency of very high-frequency converters. Based on its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be ensured.

STGW80V60DF Features

• Positive VCE(sat) temperature coefficient

• Tight parameter distribution

• Low conduction and switching losses

• Available in the TO-247 and TO-3P package

• An advanced proprietary trench gate field stop structure

STGW80V60DF Applications

• Welding

• Photovoltaic inverters

• Power factor correction

• Uninterruptible power supplies

• Very high-frequency converters