IXXR110N65B4H1

new-10%

Manufacturer part number:IXXR110N65B4H1

Manufacturer:IXYS

Description:IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT

Case Package:SOT-23

Datasheet:IXXR110N65B4H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX4™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	455W
Base Part Number	110N65
Element Configuration	Single
Power Dissipation	455W
Input Type	Standard
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	150A
Reverse Recovery Time	100ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.75V
Test Condition	400V, 55A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 110A
IGBT Type	PT
Gate Charge	183nC
Current - Collector Pulsed (Icm)	460A
Td (on/off) @ 25°C	38ns/156ns
Switching Energy	2.2mJ (on), 1.05mJ (off)
RoHS Status	ROHS3 Compliant