STGWA80H65FB Description

This STGWA80H65FB is an IGBT developed using an advanced proprietary trench gate and field stop structure. The STGWA80H65FB is part of the new“HB" series of IGB Ts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.

STGWA80H65FB Features

Maximum junction temperature: TJ = 175 °C

High-speed switching series

Minimized tail current

VCE(sat) = 1.6 V (typ.) @ IC = 80 A

Tight parameter distribution

Safe paralleling

Low thermal resistance

STGWA80H65FB Applications

Photovoltaic inverters

High-frequency converters

Communications equipment 

Broadband fixed line access 

Enterprise systems 

Enterprise machine 

Personal electronics 

Portable electronics