STGWT20V60DF

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Manufacturer part number:STGWT20V60DF

Manufacturer:STMicroelectronics

Description:STGWT20V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWT20V60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	167W
Base Part Number	STGWT20
Element Configuration	Single
Power Dissipation	167W
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	40ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Test Condition	400V, 20A, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
IGBT Type	Trench Field Stop
Gate Charge	116nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	38ns/149ns
Switching Energy	200μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Height	26.7mm
Length	15.7mm
Width	5.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$2.336160	$2.33616
10	$2.203925	$22.03925
100	$2.079174	$207.9174
500	$1.961485	$980.7425
1000	$1.850458	$1850.458

STGWT20V60DF Description

This gadget is an IGBT created using an innovative, exclusive trench gates and field stops structure. The apparatus is a member of the "V" series of IGBTs, which are the ideal compromise between switching losses and conduction to maximize very high-frequency effectiveness converters. Moreover, a successful VCE (sat) temperature coefficient and extremely precise parameter distribution make simultaneous operations safer.