STGWT30V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWT30V60F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
260W
Base Part Number
STGWT30
Element Configuration
Single
Power Dissipation
260W
Input Type
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.3V
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
163nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
45ns/189ns
Switching Energy
383μJ (on), 233μJ (off)
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.542266
$2.542266
10
$2.398365
$23.98365
100
$2.262608
$226.2608
500
$2.134536
$1067.268
1000
$2.013713
$2013.713
STGWT30V60F Product Details
STGWT30V60F Description
STGWT30V60F is a member of the V series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution. It is supplied in the TO-3P package to save board space.
STGWT30V60F Features
Low conduction and switching losses
A slightly positive VCE(sat) temperature coefficient