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STH270N8F7-6

STH270N8F7-6

STH270N8F7-6

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.1m Ω @ 90A, 10V ±20V 13600pF @ 50V 193nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)

SOT-23

STH270N8F7-6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series DeepGATE™, STripFET™ VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STH270
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 315W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 315W
Case Connection DRAIN
Turn On Delay Time 56 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V
Rise Time 180ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Height 4.8mm
Length 10.4mm
Width 15.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $4.78883 $4.78883
2,000 $4.63158 $9.26316
STH270N8F7-6 Product Details

STH270N8F7-6 Overview


A device's maximum input capacitance is 13600pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=80V, and this device has a drain-to-source breakdown voltage of 80V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 98 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 56 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STH270N8F7-6 Features


a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 98 ns


STH270N8F7-6 Applications


There are a lot of STMicroelectronics
STH270N8F7-6 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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