NTR5198NLT1G

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Manufacturer part number:NTR5198NLT1G

Manufacturer:ON Semiconductor

Description:NTR5198NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTR5198NLT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	900mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	155m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	182pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 4.5V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	2.2A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.205Ohm
Drain to Source Breakdown Voltage	60V
Height	1.01mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free