APT19F100J

new-10%

Manufacturer part number:APT19F100J

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 1000V 20A SOT-227

Case Package:SOT-23

Datasheet:APT19F100J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 8™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	19A
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	460W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	460W
Case Connection	ISOLATED
Turn On Delay Time	36 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	440m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	8500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	37ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free