STL100N10F7

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STL100N10F7

Manufacturer part number:STL100N10F7

Manufacturer:STMicroelectronics

Description:STL100N10F7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STL100N10F7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	DeepGATE™, STripFET™ VII
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Base Part Number	STL100
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Power Dissipation-Max	5W Ta 100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.3m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5680pF @ 50V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	70A
Drain-source On Resistance-Max	0.0073Ohm
Pulsed Drain Current-Max (IDM)	76A
Avalanche Energy Rating (Eas)	400 mJ
Height	950μm
Length	5.4mm
Width	6.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free