IRLR3636TRLPBF

new-10%

Manufacturer part number:IRLR3636TRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 50A DPAK

Case Package:SOT-23

Datasheet:IRLR3636TRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	143W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	143W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 4.5V
Rise Time	216ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	69 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-252AA
Drain-source On Resistance-Max	0.0083Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	396A
Avalanche Energy Rating (Eas)	170 mJ
RoHS Status	ROHS3 Compliant