STL20DN10F7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website
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STL20DN10F7 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
DeepGATE™, STripFET™ VII
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
65mOhm
Subcategory
FET General Purpose Powers
Max Power Dissipation
62.5W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL20
JESD-30 Code
R-PDSO-F6
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
6.3 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
67m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
408pF @ 50V
Gate Charge (Qg) (Max) @ Vgs
7.8nC @ 10V
Rise Time
3ns
Drain to Source Voltage (Vdss)
100V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.630960
$3.63096
10
$3.425434
$34.25434
100
$3.231541
$323.1541
500
$3.048624
$1524.312
1000
$2.876060
$2876.06
STL20DN10F7 Product Details
STL20DN10F7 Description
The device adopts the seventh generation design rules of ST's proprietary STripFET fabrication technology and adopts a new gate structure. The resulting power MOSFET shows the lowest RDS (on) of all packages.