SIA778DJ-T1-GE3

new-10%

Manufacturer part number:SIA778DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 12V/20V 4.5A/1.5A 6-Pin PowerPAK SC-70 T/R

Case Package:SOT-23

Datasheet:SIA778DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Max Power Dissipation	5W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIA778
Pin Count	6
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Power - Max	6.5W 5W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 6V
Current - Continuous Drain (Id) @ 25°C	4.5A 1.5A
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Drain to Source Voltage (Vdss)	12V 20V
Continuous Drain Current (ID)	1.5A
Drain Current-Max (Abs) (ID)	4.5A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant