STL6NM60N

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Manufacturer part number:STL6NM60N

Manufacturer:STMicroelectronics

Description:STL6NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STL6NM60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	12
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	QUAD
Terminal Form	NO LEAD
Base Part Number	STL6
Pin Count	12
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	70W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	920m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 50V
Current - Continuous Drain (Id) @ 25°C	5.75A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	5.75A
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	1A
Drain-source On Resistance-Max	0.92Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	23A
Avalanche Energy Rating (Eas)	65 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free