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STL70N10F3

STL70N10F3

STL70N10F3

STMicroelectronics

MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS

SOT-23

STL70N10F3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series STripFET™ III
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Base Part Number STL70
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.7 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 82A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 770 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant

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