STL80N3LLH6

new-10%

Manufacturer part number:STL80N3LLH6

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 30V 21A POWERFLAT

Case Package:SOT-23

Datasheet:STL80N3LLH6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	DeepGATE™, STripFET™ VI
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	5.2MOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	STL80
Pin Count	8
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Power Dissipation-Max	60W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	60W
Case Connection	DRAIN
Turn On Delay Time	9.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free