STL9N3LLH5

new-10%

Manufacturer part number:STL9N3LLH5

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 30V 9A POWERFLAT

Case Package:SOT-23

Datasheet:STL9N3LLH5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ V
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STL9
Pin Count	8
JESD-30 Code	S-XDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	724pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Rise Time	4.2ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±22V
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	22V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.022Ohm
Pulsed Drain Current-Max (IDM)	36A
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free