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ZVNL120ASTOA

ZVNL120ASTOA

ZVNL120ASTOA

Diodes Incorporated

MOSFET N-CH 200V 0.18A TO92-3

SOT-23

ZVNL120ASTOA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 180mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 3V 5V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
RoHS Status RoHS Compliant
Lead Free Lead Free

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