RP1E125XNTR

new-10%

Manufacturer part number:RP1E125XNTR

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 30V 12.5A MPT6

Case Package:SOT-23

Datasheet:RP1E125XNTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	6
JESD-30 Code	R-PDSO-F4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12.5A Ta
Gate Charge (Qg) (Max) @ Vgs	12.7nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	12.5A
Drain-source On Resistance-Max	0.014Ohm
Pulsed Drain Current-Max (IDM)	36A
DS Breakdown Voltage-Min	30V
RoHS Status	ROHS3 Compliant