STN1NF10

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Manufacturer part number:STN1NF10

Manufacturer:STMicroelectronics

Description:STN1NF10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STN1NF10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STN1N
Pin Count	4
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	2.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	105pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1A Tc
Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Rise Time	5.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	500mA
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	100V
Height	1.6mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free