STP11NM60N

new-10%

Manufacturer part number:STP11NM60N

Manufacturer:STMicroelectronics

Description:STP11NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP11NM60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	450MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	10A
Base Part Number	STP11N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	90W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Case Connection	ISOLATED
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 50V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	18.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	200 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free