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IPP80N06S4L07AKSA1

IPP80N06S4L07AKSA1

IPP80N06S4L07AKSA1

Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

SOT-23

IPP80N06S4L07AKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 5680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0064Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 71 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.539265 $0.539265
10 $0.508740 $5.0874
100 $0.479944 $47.9944
500 $0.452777 $226.3885
1000 $0.427148 $427.148

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