TK8Q65W,S1Q

new-10%

Manufacturer part number:TK8Q65W,S1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 650V 7.8A IPAK

Case Package:SOT-23

Datasheet:TK8Q65W,S1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Supplier Device Package	I-PAK
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	80W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 300V
Current - Continuous Drain (Id) @ 25°C	7.8A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	7.8A
Input Capacitance	570pF
Rds On Max	670 mΩ
RoHS Status	RoHS Compliant