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SI5403DC-T1-GE3

SI5403DC-T1-GE3

SI5403DC-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 30m Ω @ 7.2A, 10V ±20V 1340pF @ 15V 42nC @ 10V 30V 8-SMD, Flat Lead

SOT-23

SI5403DC-T1-GE3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 30mOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 6.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 50 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 7.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 140ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 6A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
DS Breakdown Voltage-Min 30V
Height 1.1mm
Length 3.05mm
Width 1.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.892533 $4.892533
10 $4.615598 $46.15598
100 $4.354337 $435.4337
500 $4.107865 $2053.9325
1000 $3.875345 $3875.345
SI5403DC-T1-GE3 Product Details

SI5403DC-T1-GE3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1340pF @ 15V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -3V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI5403DC-T1-GE3 Features


a continuous drain current (ID) of 6A
the turn-off delay time is 30 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)


SI5403DC-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI5403DC-T1-GE3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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