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IXFH76N15T2

IXFH76N15T2

IXFH76N15T2

IXYS

MOSFET N-CH

SOT-23

IXFH76N15T2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Series HiPerFET™, TrenchT2™
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 350W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:1068 items

Pricing & Ordering

QuantityUnit PriceExt. Price
30$4.27500$128.25

About IXFH76N15T2

The IXFH76N15T2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFH76N15T2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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