STP33N60DM2

new-10%

Manufacturer part number:STP33N60DM2

Manufacturer:STMicroelectronics

Description:STMICROELECTRONICS STP33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V

Case Package:SOT-23

Datasheet:STP33N60DM2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	MDmesh™ DM2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP33N
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	190W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 100V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Continuous Drain Current (ID)	24A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Pulsed Drain Current-Max (IDM)	96A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	570 mJ
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant