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FQA6N90C-F109

FQA6N90C-F109

FQA6N90C-F109

ON Semiconductor

N-Channel Tube 2.3 Ω @ 3A, 10V ±30V 1770pF @ 25V 40nC @ 10V TO-3P-3, SC-65-3

SOT-23

FQA6N90C-F109 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 198W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 198W
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 650 mJ
Height 18.9mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.12000 $3.12
10 $2.78400 $27.84
450 $2.05982 $926.919
900 $1.67013 $1503.117
1,350 $1.55879 $1.55879
FQA6N90C-F109 Product Details

FQA6N90C-F109 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 650 mJ.A device's maximal input capacitance is 1770pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 6A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

FQA6N90C-F109 Features


the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 24A.
a threshold voltage of 5V


FQA6N90C-F109 Applications


There are a lot of ON Semiconductor
FQA6N90C-F109 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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