STP5NK60ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STP5NK60ZFP Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP5N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
20A
Avalanche Energy Rating (Eas)
220 mJ
Height
16.4mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STP5NK60ZFP Product Details
STP5NK60ZFP Description
STP5NK60ZFP is a 600V N-channel SuperMESH? Power MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh? products. STP5NK60ZFP Features
typical RDS(on) = 1.2Ω extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility STP5NK60ZFP Applications
high current, high speed switching ideal for off-line power supplies, adaptors and pfc lighting Switching applications