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STP60N55F3

STP60N55F3

STP60N55F3

STMicroelectronics

STP60N55F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

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STP60N55F3 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ III
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP60N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.5 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
STP60N55F3 Product Details

STP180N55F3 Description


STP180N55F3 is a 55v N-channel STripFET? Power MOSFET. The n-channel enhancement mode Power MOSFET STP180N55F3 is the latest refinement of STMicroelectronics unique “single feature size?”strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics, and low gate charge. The operating junction and storage temperature are between -55 and 175℃.  The MOSFET STP180N55F3 is in the TO-220 package with 330W power dissipation. 



STP180N55F3 Features


  • Ultra-low on-resistance

  • 100% avalanche tested

  • Drain-source voltage (VGS=0):55V

  • Gate-source voltage: ±20V

  • Drain current (continuous) at TC = 25°C: 120A



STP180N55F3 Applications


  • Rotary Switch

  • DIP Switch

  • Limit Switch

  • Reed Switch

  • Rocker Switch

  • Toggle Switch


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