STS19N3LLH6

new-10%

Manufacturer part number:STS19N3LLH6

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 30V 19A 8SOIC

Case Package:SOT-23

Datasheet:STS19N3LLH6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	DeepGATE™, STripFET™ VI
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	STS19
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.7W Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	9.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.6m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 15V
Rise Time	30ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	19A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0075Ohm
Pulsed Drain Current-Max (IDM)	76A
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant