QS8J13TR

new-10%

Manufacturer part number:QS8J13TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2P-CH 12V 5.5A TSMT8

Case Package:SOT-23

Datasheet:QS8J13TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	15mOhm
Max Power Dissipation	1.25W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1.25W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	60nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Continuous Drain Current (ID)	5.5A
DS Breakdown Voltage-Min	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant