Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF9910TRPBF

  • IRF9910TRPBF
  • IRF9910TRPBF

IRF9910TRPBF

IRF9910TRPBF

Infineon Technologies

IRF9910TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF9910TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 13.4MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 10A
Base Part Number IRF9910PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A 12A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 33 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.55 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.157759 $1.157759
10 $1.092226 $10.92226
100 $1.030402 $103.0402
500 $0.972077 $486.0385
1000 $0.917054 $917.054
IRF9910TRPBF Product Details

IRF9910TRPBF Description


Fifth Generation HEXFETs from International Rectifier have extraordinarily low on-resistance per silicon area thanks to cutting-edge manufacturing methods. This feature, along with the rapid switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, provides the designe with an incredibly efficient and reliable device for usage in a number of applications. The SO-8's improved thermal properties and multiple-die capacity make it the perfect choice for a variety of power applications. This adjustment was possible because to the usage of a leadframe that was custom made. With this invention, multiple devices can be used while substantially less board area is needed. The package is designed for use with wave soldering or vapor phase infrared technologies.



IRF9910TRPBF Features


  • 4.5V VGS with Very Low RDS(on)

  • Gate Fee is Minimal

  • Voltage and Current of Fully Characterized Avalanches

  • Gate Rating Maximum 20V VGS



IRF9910TRPBF Applications


  • Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, gaming consoles, and set-top box

  • free of lead


Related Part Number

BSC0921NDIATMA1
Infineon Technologies
BSC0921NDIATMA1
$0 $/piece
FDC6322C
Rochester Electronics, LLC
FDC6322C
$0 $/piece
DMG1024UV-7
Diodes Incorporated
DMG1024UV-7
$0 $/piece
FDS4559
ON Semiconductor
FDS4559
$0 $/piece
CSD75207W15
Texas Instruments
CSD75207W15
$0 $/piece
UPA2791GR-E1-AT
Rochester Electronics, LLC
UPA2791GR-E1-AT
$0 $/piece
SI4816BDY-T1-GE3
Vishay Siliconix
SI4816BDY-T1-GE3
$0 $/piece
CAS120M12BM2
Cree/Wolfspeed
CAS120M12BM2
$0 $/piece
DMC1028UFDB-7
Diodes Incorporated
DMC1028UFDB-7
$0 $/piece
NX3008NBKSH
Nexperia USA Inc.
NX3008NBKSH
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News