STS4DNFS30L

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STS4DNFS30L

Manufacturer part number:STS4DNFS30L

Manufacturer:STMicroelectronics

Description:STS4DNFS30L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STS4DNFS30L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	56mOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	4A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS4D
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 5V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
Height	6.35mm
Length	6.35mm
Width	12.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free