STT3PF20V

new-10%

Manufacturer part number:STT3PF20V

Manufacturer:STMicroelectronics

Description:MOSFET P-CH 20V 2.2A SOT23-6

Case Package:SOT-23

Datasheet:STT3PF20V Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-2.2A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STT3P
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.6W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	38 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.2A Tc
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	8.8A
Height	1.3mm
Length	3.05mm
Width	1.75mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free